Bosch has introduced its third generation of silicon carbide (SiC) chips, marking a significant step forward in semiconductor performance for electrification.
Next-gen silicon carbide technology
The company is already supplying samples to global automakers, signalling the next phase of deployment in electric vehicle (EV) power electronics.
The latest generation of SiC chips delivers a 20% performance increase compared to previous iterations, while also being significantly smaller. This combination of higher power density and reduced size enables greater efficiency in drive electronics and allows more chips to be produced per wafer.

“Silicon-carbide semiconductors are the key drivers of electromobility. They control the flow of energy and make it as efficient as possible. With our next-generation SiC chips, we’re systematically expanding our technological leadership in this field and helping our customers put even more powerful and efficient electric vehicles onto the road,” said Markus Heyn, member of the Bosch board of management and chairman of the Bosch Mobility business sector.
“Our next-generation chips deliver 20 percent higher performance and are also significantly smaller than the previous generation. This miniaturization is the key to greater cost efficiency, as we can produce many more chips per wafer. That means we’re playing a key role in making high-performance electronics more widely available.”

Bosch targets global leadership in SiC chips
Bosch is positioning itself to lead in the rapidly expanding SiC semiconductor market, driven largely by electrification trends.
“Our ambition is clear: we want to be a globally leading manufacturer of SiC chips,” said Markus Heyn.
Since starting production in 2021, Bosch has already delivered more than 60 million SiC chips worldwide, underscoring growing adoption across the automotive sector.
Billions invested to scale global semiconductor manufacturing
To support demand and scale production, Bosch has invested heavily in its global semiconductor manufacturing footprint:
- Around €3 billion invested in semiconductors through European IPCEI programs
- Additional €1.9 billion investment in its U.S. facility

The company’s third-generation SiC chips are produced on 200-millimeter wafers at its Reutlingen, Germany fab, while a second facility in Roseville, California is being equipped for production, with initial samples already planned for customer trials.
“In the future, Bosch will supply its innovative SiC chips from these two fabs in Germany and the U.S.,” Heyn said, highlighting a strategy aimed at building more robust and resilient supply chains for automotive electrification.

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